MRF6V2300N MRF6V2300Nb 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfets designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 mhz. devices are unmatched and are suitable for use in industrial, medical and scientific applications. ? typical cw performance at 220 mhz: v dd = 50 volts, i dq = 900 ma, p out = 300 watts power gain ? 27 db drain efficiency ? 68% ? capable of handling 10:1 vswr, @ 50 vdc, 210 mhz, 300 watts cw output power features ? integrated esd protection ? greater negative gate - source voltage range for improved class c operation ? excellent thermal stability ? facilitates manual gain control, alc and modulation techniques ? 225 c capable plastic package ? rohs compliant table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +110 vdc gate - source voltage v gs - 6.0, +10 vdc storage temperature range t stg - 65 to +150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature tbd c, tbd w cw case temperature tbd c, tbd w cw r jc tbd tbd c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. (calculator available when part is in production.) 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. this document contains information on a preproduction product. specifications and information herein are subject to change with out notice. document number: order from rf marketing rev. 4, 10/2006 freescale semiconductor technical data MRF6V2300N MRF6V2300Nb case 1484 - 04, style 1 to - 272 wb - 4 plastic MRF6V2300Nb preproduction case 1486 - 03, style 1 to - 270 wb - 4 plastic MRF6V2300N 10 - 450 mhz, 300 w, 50 v lateral n - channel single - ended broadband rf power mosfets parts are single - ended ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor MRF6V2300N MRF6V2300Nb table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) tbd (minimum) machine model (per eia/jesd22 - a115) tbd (minimum) charge device model (per jesd22 - c101) tbd (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 110 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 50 vdc, v gs = 0 vdc) i dss ? ? 10 adc drain - source breakdown voltage (i d = 150 ma, v gs = 0 vdc) bv dss 110 ? ? vdc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 10 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 800 adc) v gs(th) ? 2.4 ? vdc drain - source on - voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.3 ? vdc dynamic characteristics reverse transfer capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.44 ? pf output capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 120 ? pf input capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 282 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 50 vdc, i dq = 900 ma, p out = 300 w, f = 220 mhz, cw power gain g ps ? 27 ? db drain efficiency d ? 68 ? % input return loss irl ? -17 ? db p out @ 1 db compression point, cw (f = 220 mhz) p1db ? 330 ? w attention: the MRF6V2300N and MRF6V2300Nb are high power devices and special considerations must be followed in board design and mounting. incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. refer to freescale application note an3263 (for bolt down mounting) or an1907 (for solder reflow mounting) prior to starting system design to ensure proper mounting of these devices.
MRF6V2300N MRF6V2300Nb 3 rf device data freescale semiconductor typical characteristics 400 24 27.5 0 10 80 v dd = 50 vdc i dq = 900 ma f = 220 mhz 100 50 27 26 25 70 60 50 40 30 20 p out , output power (watts) cw figure 1. power gain and drain efficiency versus cw output power g ps , power gain (db) d, drain efficiency (%) 150 g ps d 400 23 28 0 v dd = 50 vdc f = 220 mhz 100 50 27 26 25 24 p out , output power (watts) cw figure 2. power gain versus output power g ps , power gain (db) 150 i dq = 990 ma 1090 ma 720 ma 810 ma 900 ma 100 ?50 ?20 0 p out , output power (watts) pep ?25 ?30 ?35 ?40 50 200 figure 3. third order intermodulation distortion versus output power imd, third order intermodulation distortion (dbc) 150 v dd = 50 vdc, i dq = 900 ma f1 = 220 mhz, f2 = 220.1 mhz two ?tone measurements 35 35 60 10 25 c ?30 c 85 c 25 15 50 45 40 p in , input power (dbm) figure 4. output power versus input power over temperature p out , output power (dbm) v dd = 50 vdc i dq = 900 ma f = 220 mhz 20 30 26.5 25.5 24.5 200 250 300 350 200 250 300 350 55 ?45 im3 ?l im3 ?u
4 rf device data freescale semiconductor MRF6V2300N MRF6V2300Nb package dimensions case 1486 - 03 issue c datum plane bottom view a1 2x d1 e3 e1 d3 e4 a2 pin 5 note 8 a b c h drain lead d a m aaa c 4x b1 2x d2 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at the top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions ? d" and ? e1" do not include mold protrusion. allowable protrusion is .006 per side. dimensions ? d" and ? e1" do include mold mismatch and are deter? mined at datum plane ?h?. 5. dimension ? b1" does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the ? b1" dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. 7. dimension a2 applies within zone ? j" only. 8. hatching represents the exposed area of the heat slug. c1 f zone j e2 2x a dim a min max min max millimeters .100 .104 2.54 2.64 inches a1 .039 .043 0.99 1.09 a2 .040 .042 1.02 1.07 d .712 .720 18.08 18.29 d1 .688 .692 17.48 17.58 d2 .011 .019 0.28 0.48 d3 .600 ? ? ? 15.24 ? ? ? e .551 .559 14 14.2 e1 .353 .357 8.97 9.07 e2 .132 .140 3.35 3.56 e3 .124 .132 3.15 3.35 e4 .270 ? ? ? 6.86 ? ? ? f b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .025 bsc .106 bsc 0.64 bsc 2.69 bsc 1 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source aaa .004 0.10 gate lead 4x e 2x e seating plane 4 2 3 ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? e5 .346 .350 8.79 8.89 to - 270 wb - 4 plastic MRF6V2300N
MRF6V2300N MRF6V2300Nb 5 rf device data freescale semiconductor
6 rf device data freescale semiconductor MRF6V2300N MRF6V2300Nb
MRF6V2300N MRF6V2300Nb 7 rf device data freescale semiconductor
8 rf device data freescale semiconductor MRF6V2300N MRF6V2300Nb information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: order from rf marketing rev. 4, 10/2006
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